Ещё из раздела
- 42S32160F-75ETL IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TSOP86 II; 0÷70°C
- 42S32160F-7BLI-TR IC: DRAM memory; 4Mx32bitx4; 143MHz; 7ns; TFBGA90; -40÷85°C
- 42S32160F-6BLI-TR IC: DRAM memory; 4Mx32bitx4; 167MHz; 6ns; TFBGA90; -40÷85°C
- 46LR16320C-6BLA2 IC: DRAM memory; 8Mx16bitx4; 166MHz; 6ns; TFBGA60; -40÷105°C
- 45S16320F-7TLA1 IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C
- 42S32160F-75EBLI IC: DRAM memory; 4Mx32bitx4; 133MHz; 7.5ns; TFBGA90; -40÷85°C
- 45S16320F-7CTLA2 IC: DRAM memory; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷105°C
- 43QR16512A-083TBL IC: DRAM memory; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C; parallel
- 49NLC36160A-25EWBL IC: DRAM memory; 16Mx36bit; 400MHz; 15ns; TWBGA144; 0÷95°C
- WV51216EBLL55TLI IC: SRAM memory; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II; parallel
- WV25616BLL10TL IC: SRAM memory; 256kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; parallel
- WV5128BLL10BLI IC: SRAM memory; 512kx8bit; 2.4÷3.6V; 10ns; TFBGA36; parallel
- WVH16M8DBLL100B1LI IC: SRAM memory; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel; -40÷85°C
- WVE4M16EALL70BLI IC: SRAM memory; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48; parallel
- WV102416EBLL45BLI IC: SRAM memory; 1Mx16bit; 2.2÷3.6V; 45ns; VFBGA48; parallel
- WV102416DBLL45TLI IC: SRAM memory; 1Mx16bit; 2.2÷3.6V; 45ns; TSOP48; parallel
- WV51216EDBLL10BLI IC: SRAM memory; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48; parallel
- WV102416DBLL10TLI IC: SRAM memory; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48; parallel
- WV102416BLL10MLI IC: SRAM memory; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48; parallel
- WV25616EBLL45BLI IC: SRAM memory; 256kx16bit; 2.2÷3.6V; 45ns; VFBGA48; parallel
- WV25616EDBLL8BLI IC: SRAM memory; 256kx16bit; 3.3V; 8ns; TFBGA48; parallel; -40÷85°C
- WV25616BLL10BLI IC: SRAM memory; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48; parallel
- WV51216BLL55BLI IC: SRAM memory; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48; parallel
- LPS25636A200TQLI IC: SRAM memory; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Памяти - микросхемы
11 623 позицииПо умолчанию