Ещё из раздела
- MT53E512M32D1ZW0BW IC: DRAM memory
- MT53E512M32D1ZW0IT IC: DRAM memory
- MT53E512M32D1ZW0T IC: DRAM memory
- MT53E512M32D1ZW0W IC: DRAM memory
- MT53E512M32D1ZW0WT IC: DRAM memory
- MT53E768M16D1ZW0 IC: DRAM memory
- MT53E768M32D4DT0AI IC: DRAM memory
- MT53E768M32D4DT0WT IC: DRAM memory
- MT60B2G8RZ56BITD IC: FLASH memory
- MT60B8G4AT64BB IC: FLASH memory
- MT62F1536M64D8CL IC: FLASH memory
- MT62F1G16D1DS023 IC: FLASH memory
- MT62F1G32D2DS023 IC: FLASH memory
- MT62F1G32D2DS023IT IC: FLASH memory
- MT62F1G64D4ZX023 IC: FLASH memory
- MT62F2G32D4DS023 IC: FLASH memory
- MT62F2G32D4DS023WT IC: FLASH memory
- MT62F4G32D8DV023 IC: FLASH memory
- MT62F512M32D1DS0 IC: FLASH memory
- MT62F512M32D1DS0AI IC: FLASH memory
- IS42S32200N-6BLI IC: память DRAM; 64МбDRAM; 2Mx32бит; 166МГц; TFBGA90; -40÷85°C
- IS42S32400J-7TL IC: память DRAM; 128МбDRAM; 4Mx32бит; 143МГц; 7нс; TSOP86 II; лоток
- MT53E256M32D2DS0 IC: память DRAM; 8ГбDRAM; 1,866ГГц; -30÷85°C; 1,1В
- MT53E768M16D1ZW0AA IC: память DRAM; 12ГбDRAM; 2,133ГГц; -25÷85°C; 1,1÷1,17В